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FM25CL64B-GTR

IC FRAM 64K SPI 20MHZ 8SOIC

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Consulta le specifiche del prodotto per i dettagli del prodotto.

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FM25CL64B-GTR

IC FRAM 64K SPI 20MHZ 8SOIC

Gli ordini superiori a $ 200 hanno diritto a un regalo in stile cinese in edizione limitata.

Gli ordini superiori a $ 200 hanno diritto a un regalo in stile cinese in edizione limitata.

Gli ordini superiori a $ 1000 beneficiano di un'esenzione dalle spese di spedizione di $ 30.

Gli ordini superiori a $ 5000 beneficiano dell'esenzione dalle spese di spedizione e di transazione.

Queste offerte sono applicabili sia ai clienti nuovi che a quelli esistenti e sono valide dal 1 gennaio 2024 al 31 dicembre 2024.

  • Produttore:

    CYPERSS

  • Scheda dati:

    FM25CL64B-GTR datasheet

  • Pacchetto/custodia:

    8-SOIC (0.154, 3.90mm Width)

  • categoria di prodotto:

    Memoria

  • RoHS Status: Stato RoHS Lead free/RoHS Compliant

Invia la tua richiesta di preventivo adesso e prevediamo di fornirti un preventivo entro ottobre 15, 2024. Effettua ora il tuo ordine e prevediamo di completare la transazione entro ottobre 17, 2024. Ps: L'orario è secondo GMT+8:00.

Consegna:
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Azione:2500 PCS

Il nostro impegno è fornire preventivi tempestivi entro 12 ore. Per ulteriore assistenza, contattaci all'indirizzo sales@censtry.com.

FM25CL64B-GTR Dettagli del prodotto

Features 

64K bit Ferroelectric Nonvolatile RAM  

Organized as 8,192 x 8 bits 

High Endurance 100 Trillion (1014) Read/Writes 

38 Year Data Retention (@ +75ºC) 

NoDelay™ Writes 

Advanced High-Reliability Ferroelectric Process 

Very Fast Serial Peripheral Interface - SPI 

Up to 20 MHz Frequency 

Direct Hardware Replacement for EEPROM 

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) 

Sophisticated Write Protection Scheme 

Hardware Protection 

Software Protection 

Low Power Consumption

Low Voltage Operation 2.7-3.65V 

200 A Active Current (1 MHz) 

3 A (typ.) Standby Current 

Industry Standard Configuration 

Industrial Temperature -40 C to +85 C 

8-pin “Green”/RoHS SOIC and TDFN Packages


Description 

The FM25CL64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.  

The FM25CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25CL64B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.  

These capabilities make the FM25CL64B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.  

The FM25CL64B provides substantial benefits to users of serial EEPROM as a hardware drop-in 

replacement. The FM25CL64B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C.  


Request a quote FM25CL64B-GTR at censtry.com. All items are new and original with 365 days warranty! The excellent quality and guaranteed services of FM25CL64B-GTR in stock for sale, check stock quantity and pricing, view product specifications, and order contact us:sales@censtry.com.
The price and lead time for FM25CL64B-GTR depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.

FM25CL64B-GTR

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