FM25CL64B-GTR

Caratteristiche：

Features 

64K bit Ferroelectric Nonvolatile RAM  

Organized as 8,192 x 8 bits 

High Endurance 100 Trillion (1014) Read/Writes 

38 Year Data Retention (@ +75ºC) 

NoDelay™ Writes 

Advanced High-Reliability Ferroelectric Process 

Very Fast Serial Peripheral Interface - SPI 

Up to 20 MHz Frequency 

Direct Hardware Replacement for EEPROM 

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) 

Sophisticated Write Protection Scheme 

Hardware Protection 

Software Protection 

Low Power Consumption

Low Voltage Operation 2.7-3.65V 

200 A Active Current (1 MHz) 

3 A (typ.) Standby Current 

Industry Standard Configuration 

Industrial Temperature -40 C to +85 C 

8-pin “Green”/RoHS SOIC and TDFN Packages

Description 

The FM25CL64B is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.  

The FM25CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25CL64B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM.  

These capabilities make the FM25CL64B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss.  

The FM25CL64B provides substantial benefits to users of serial EEPROM as a hardware drop-in 

replacement. The FM25CL64B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C.  

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