Tokyo, Japan, June 29, 2020 - Renesas Electronics Group (TSE: 6723), the world's leading semiconductor solution provider, today announced the launch of two new 100V half-bridge MOSFET drives, HIP2211 and HIP2210.HIP2211 is a new generation pin compatible upgrade to Renesas electronics' popular ISL2111 Bridge drive;The new HIP2210 offers three-level PWM input to simplify power and motor driver design.HIP2211 and HIP2210 are ideal for 48-V communication power supplies, Class D audio amplifiers, solar and UPS inverters.The rugged product can power household and outdoor products powered by lithium-ion batteries, water pumps and 48-V motor drivers in cooling fans.
The HIP221x driver is designed for reliable operation in harsh operating conditions, with high speed, high voltage HS pins that can withstand up to -10V of continuous voltage and convert at 50V/ NS.Comprehensive undervoltage protection works in collaboration with the HIP2210's programmable breakdown protection to ensure that the MOSFET it drives is not damaged by power or other external failures.Renesas HIP221x driver with strong 3A drive pull current and 4A drive perfusion current, as well as extremely fast 15NS typical propagation delay and 2NS typical delay matching, is the best solution for high-frequency switching applications.Both HIP2210 and HIP2211 are designed to complement Renesas advanced DC/DC and brushless motor drive systems with microcontrollers.
"The innovative HIP221x continues our 25-year history of industry-leading Harris Smart Power (HIP) half-bridge drive research and development," said Philip Chesley, Vice President of Renesas electronics Industry and Communications.Strong and robust noise resistance, ultra-low transmission latency and high system efficiency are key features our customers rely on for the entire HIP half-bridge MOSFET drive family.
Key features of HIP2211 and HIP2210
Maximum voltage of 15VDC bootstrap (maximum absolute value of 120V HS) can support 100V half-bridge architecture
Wide VDD voltage, operating range 6V to 18V (maximum absolute value 20V)
HS pins can withstand voltages up to -10V and 50V/ NS voltage conversion rates
Typical bootstrap integrated 0.5 Ω diode, without using external discrete diode
VDD and boot UVLO prevent low grid voltage from driving NFET
Breakdown is prevented by an adjustable dead zone time delay with RDT pins (for HIP2210 only) and single resistance adjustable range from 35NS to 350NS
HIP2211 and HIP2210 are now available for purchase from Renesas Electronics' global distributor at a unit price of $1.30 per batch for 1,000 pieces.The HIP2211 is packaged with 8-pin SOIC and 10-pin 4mm x 4mm TDFN.
The HIP2210 is encapsulated with 10 pins of 4mm x 4mm TDFN
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